Acetone For Electronics & Semiconductors

    • Product Name: Acetone For Electronics & Semiconductors
    • Factroy Site: No. 59 Shihua 3rd Road, Xuwei New Area, Lianyungang City
    • Price Inquiry: sales9@boxa-chem.com
    • Manufacturer: Shenghong Refining & Chemical (Lianyungang) Co., Ltd
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    Specifications
    HS Code 226486
    Chemical Name Acetone (2-propanone)
    Chemical Formula C3H6O
    Cas Number 67-64-1
    Grade Electronics/Semiconductor Grade
    Purity Assay ≥99.5%
    Appearance Clear colorless liquid
    Boiling Point 56°C at 760 mmHg
    Melting Point -95°C
    Flash Point -20°C (closed cup)
    Evaporation Rate Buac 1 5.6
    Water Content ≤0.2%
    Residue After Evaporation ≤5 ppm
    Specific Gravity 0.791 at 20°C
    Vapor Density 2.0 (air=1)

    As an accredited Acetone For Electronics & Semiconductors factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing High-purity Acetone for Electronics & Semiconductors is packaged in a 4-liter glass bottle with a tight, solvent-resistant seal.
    Container Loading (20′ FCL) 20′ FCL: Palletized drums of flammable, electronics-grade acetone, secured with proper grounding, ventilation, and hazard labeling.
    Shipping Acetone for electronics and semiconductors is shipped in UN-approved containers, strictly segregated from oxidizers. Ground and air transport require proper labeling, documentation, and compliance with hazardous materials regulations. Secure, leak-proof packaging prevents contamination and vapor release, ensuring safe transit for this high-purity, flammable solvent.
    Storage Store Acetone for Electronics & Semiconductors in tightly sealed, approved containers in a cool, dry, well-ventilated area. Keep away from ignition sources, heat, sparks, and incompatible oxidizers. Use grounded containers to prevent static buildup. Protect from direct sunlight. Ensure proper labeling and segregation to maintain purity and prevent contamination.
    Shelf Life Shelf life is typically two to three years if kept tightly sealed, away from moisture, heat, and contamination.
    Application of Acetone For Electronics & Semiconductors

    How Does Water Ingress Impact Acetone-Based Stripper Bath Life in High-Volume 200 mm Production?

    In front-end semiconductor lithography rework loops, positive-tone novolak/diazonaphthoquinone resist films are removed by immersion in a 70:30 v/v acetone/N-methyl-2-pyrrolidone (NMP) blend maintained at 45±5°C in a Class 10 cleanroom-compatible wet bench. The bath is sparged with filtered nitrogen to maintain a low-oxygen headspace and reduce fire hazard. Application-specific wafer carriers fabricated from fluoropolymer minimize contamination. Stripping rate for a 2.5 µm as-coated film falls within 1.5–2.8 µm/min, a kinetic window that shrinks abruptly when water content exceeds 0.5 wt%. Moisture ingress from ambient humidity and carryover from previous rinse steps hydrolyzes NMP to monomethylamine, which attacks aluminum metallization in peripheral bond pads. Production facilities therefore enforce a daily bath life threshold: after 400–500 wafers, the diluted bath is purified by fractional distillation or replaced entirely. Compliance with SEMI C8 Grade 2 acetone is mandatory for this operation, with lot-by-lot certificates reporting non-volatile residue (NVR) below 5 ppm by ASTM D1353, acidity below 0.008 meq/g, and each cation species limited to ≤10 ppb as measured by ICP-MS. The incoming solvent is pre-dried over molecular sieves until Karl Fischer titration reads <200 ppm moisture. After the acetone rinse cascade and final isopropyl alcohol displacement, wafers proceed through a Marangoni-type dryer. The output is a fully stripped wafer exhibiting sub-50 nm residual particle counts under laser surface inspection, ready for re-coat or subsequent dielectric deposition. Off-spec bath chemistry—detectable by a drop in refractive index below 1.356 at the sodium D-line—leads to resist crusting at the wafer edge, mandating re-cleaning. Bulk acetone storage must be grounded and inerted to stay outside the flammability limits of 2.5–12.8 vol% in air.

    Acetone/D-Limonene Azeotropic Blends for No-Clean Flux Residue Removal Under Low Standoff Components

    Printed circuit board assemblies (PCBAs) post-reflow carry no-clean solder paste residues that become ionic leakage paths beneath quad-flat no-lead (QFN) and ball-grid array (BGA) packages with standoff heights below 50 µm. Vapour degreaser chemistries formulated with acetone and d-limonene—typically at an azeotropic ratio of 85:15 wt%—penetrate these narrow gaps by condensing on the cooler board surfaces in a two-sump degreaser operating with a vapour zone temperature of 58±2°C. The acetone component solvates modified rosin acids, while the terpene fraction dissolves thermally polymerized ester linkages in the flux residue matrix. Process validation follows IPC-TM-650 Method 2.3.25, with post-clean ionic contamination measured on a zero-ion tester; acceptance criteria align with J-STD-001 Class 3, requiring bulk ion equivalents below 1.56 µg/cm² NaCl. Solvent-grade acetone used in this application must hold an NVR below 10 ppm per ASTM D1353 to avoid deposition of insulating films on RF microstrip traces. A production-scale vapour degreaser processes 18–22 panels per hour, with periodic acidity checks via titration against 0.01 N sodium hydroxide to a bromothymol blue endpoint; an acid number exceeding 0.05 mg KOH/g signals decomposition and requires a full solvent change. Exhaust carbon adsorbers recover the acetone-limonene stream for recycling. The final product is a residue-free PCBA with surface insulation resistance remaining above 10⁸ Ω after 96-hour biased humidity testing at 85°C/85% RH. Acetone-only systems cannot remove the hardened darker residues on reworked boards, hence the blended azeotrope is the default for densely populated military-aerospace assemblies.

    Removal of sub-micron particulate contamination from MEMS inertial sensor proof masses after deep reactive ion etching (DRIE) release routinely relies on a sequential soak in semiconductor-grade acetone followed by isopropyl alcohol (IPA) displacement. The acetone bath is maintained at 25±2°C in a Class 100 cleanroom wet deck, with ultrasonic energy applied at 35 kHz for 5–10 minutes. Metal cation levels are held below <1 ppb via in-line ion-exchange resin polishing to prevent electrostatic adhesion of charged residues. The decoupled plasma source used during the Bosch process leaves fluorocarbon films that are lifted by acetone’s moderate Hansen solubility parameter match—δD=15.5 MPa½, δP=10.4 MPa½, δH=7.0 MPa½—without attacking the silicon structural layer. After acetone exposure, a rapid transfer into an IPA bath halts redeposition and accelerates drying. The final released MEMS accelerometer or gyroscope element is particle-free, with measured surface roughness changes of <0.2 nm RMS by atomic force microscopy. Process qualification for this step requires the acetone to conform to SEMI C8 Grade 1 cation limits and a particle loading specification of <50 particles/mL at 0.5 µm sizing, verified by laser particle counter. Stiction-related yield loss drops below 0.3% when the rinse-to-dry transfer time is kept under 8 seconds.

    Table 1. Acetone Purity Requirements Mapped to Electronics Application Segments
    Application SegmentTypical SEMI C8 GradeCritical Impurity ParameterTest MethodAcceptance Criterion
    FEOL photoresist strippingGrade 2Non-volatile residueASTM D13535 ppm
    MEMS release cleaningGrade 1Individual metal cationsSEMI C8 ICP-MS1 ppb per element
    PCBA flux residue removalGrade 2/3Acidity, NVRASTM D1353, titrationAcidity ≤ 0.01 meq/g; NVR ≤ 10 ppm
    Silicone conformal coating dilutionGrade 3Water contentASTM D4017 (Karl Fischer)0.5 wt%
    GaAs edge bead removal (manual)Grade 2Metal cations (Au, Ag, Cu)SEMI C8 ICP-MS10 ppb per transition metal

    When Acetone-Soaked Swabs Replace Automated Bevel Etch Modules in Low-Volume GaAs RF Circuit Fabs

    Gallium arsenide pHEMT wafer edge bead removal in pilot-line or specialty foundry environments often forgoes automated bevel etch modules for a manual acetone swabbing procedure. A polyester-knit cleanroom swab, pre-wetted with SEMI C8 Grade 2 acetone, is drawn along the wafer periphery rotated on a vacuum chuck at 60–90 rpm. The solvent dissolves the edge-accumulated resist wedge within 15–25 seconds while a second dry swab immediately collects the dissolved bead to prevent re-deposition on active die. Metal contamination from the swab or solvent is unacceptable; lot testing must confirm transition metal concentrations below 10 ppb to avoid formation of deep-level traps in the GaAs bandgap that degrade device ft. Finished wafers proceed to gate lithography without edge defects that would lift off metal in subsequent e-beam evaporation. This operation is limited to batches under 25 wafers; at higher throughputs, the acetone evaporation rate and operator-to-operator variability impose an unacceptable critical dimension scatter of ±0.15 µm on 0.25 µm gate-length features.

    To achieve a sprayable viscosity of 18–22 seconds (Zahn Cup #2) for a room-temperature-vulcanizing silicone conformal coating, acetone is metered at 3–5 wt% under continuous agitation into the resin supplied at 10,000 cPs. The mixture is filtered through a 10 µm absolute-rated polypropylene cartridge before loading into a high-volume low-pressure (HVLP) spray gun with a 0.8 mm nozzle. Coating is applied to populated PCBAs pre-cleaned to IPC-TM-650 2.3.25 specifications. The acetone flashes within 30 seconds at 25°C ambient, yielding a uniform dry film thickness of 50–75 µm. The cured silicone meets IPC-CC-830B criteria for dielectric withstand per IPC-TM-650 2.5.7.2 and fungus resistance. A known operational risk exists: incomplete acetone flash-off can leave micro-blisters under the coating during humidity cycling, mandating a forced-air hold time of at least 60 seconds before the thermal cure ramp to 90°C. Production equipment must incorporate concentration monitoring of the lower explosive limit; acetone’s LEL of 2.5 vol% in air requires ventilation rates of at least 0.5 m/s face velocity at the spray booth opening.

    In legacy PCB fabrication, thermally curable liquid photoimageable solder mask inks are occasionally reduced with acetone at 5–10 wt% to restore a screen-printable viscosity of 800–1200 cPs; the solvent is entirely driven off during the 30-minute tack-dry step at 80°C, leaving a registered mask film compliant with IPC-SM-840C Class T. Glycol ethers have largely displaced acetone in this sub-process due to slower evaporation rates that avoid screen clogging in continuous-run automatic presses.

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    Certification & Compliance
    More Introduction

    The product designation Acetone, Semiconductor Grade (Chemical Abstracts Service registry number 67-64-1), supplied under model codes aligned with SEMI C8-0616 purity tiers, is a high-purity dimethyl ketone manufactured through a multi-step rectification and sub-ppb filtration cascade specifically engineered to meet the contamination budgets of sub-10 nm node device fabrication. The liquid is dispensed in 200 L fluorinated high-density polyethylene drums, 1000 L stainless steel intermediate bulk containers with electropolished internal surfaces (Ra ≤ 0.25 µm), or bulk isotanker delivery with dedicated, helium-leak-tested transfer lines. The headspace of all packaging is blanketed with purified nitrogen (99.9999%) to suppress atmospheric CO₂ ingress and moisture absorption, maintaining a water specification of ≤ 50 ppm at the point of filling.

    What Differentiates Semiconductor-Grade Acetone From Industrial Solvent Streams?

    Standard technical-grade acetone, typically produced by the cumene hydroperoxide cleavage route, retains a metal ion burden dominated by sodium, iron, and copper in the low ppm range, making it unsuitable for front-end-of-line wet bench operations where ionic contamination above 1010 atoms/cm² on a bare silicon surface can shift flatband voltage by more than 50 mV. Semiconductor-grade acetone, in contrast, is subjected to a proprietary post-synthesis purification train: a 15-stage countercurrent distillation under sub-atmospheric pressure (≤ 50 mbar) to remove high-boiling aldehydes and mesityl oxide, followed by sequential passage through 0.05 µm poly(tetrafluoroethylene) membrane filtration and a mixed-bed ion-exchange polishing column operating at a linear velocity below 2 cm/min to reduce individual cation concentrations below 1 ppb for Na, K, Fe, Cu, and Zn. Non-volatile residue (NVR) is controlled to ≤ 1 ppm, measured gravimetrically after evaporation of a 100 mL aliquot at 105 °C in a platinum dish, per ASTM D1353-13. The absence of high-boiling polar contaminants eliminates the “solvent residue coronas” observed after spin-drying on patterned wafers.

    Fabrication facilities performing gate oxide pre-clean immediately before furnace loading commonly specify SEMI C8 Grade A acetone. The key performance differentiator is not merely bulk purity but the lot-to-lot consistency of particle size distribution above 0.1 µm, which must remain below 50 particles/mL as determined by laser light obscuration according to SEMI C41-0616. Industrial-grade material, absent such filtration, may contain more than 10,000 particles/mL in the submicron channel, directly elevating defect density on immersion-lithography immersion hoods.

    Metal Ion and Particle Burden Specifications

    The table below collates assay limits for three purity grades as defined by SEMI C8-0616, juxtaposed with typical values for industrial acetone.

    ParameterMethodGrade A (ppb max)Grade B (ppb max)Grade C (ppb max)Industrial Grade (ppb typical)
    Sodium (Na)ICP-MS0.55501200
    Potassium (K)ICP-MS0.5550900
    Iron (Fe)ICP-MS0.55502500
    Copper (Cu)ICP-MS0.5550400
    Zinc (Zn)ICP-MS0.5550300
    Chloride (Cl⁻)Ion Chromatography502005005000
    WaterKarl Fischer50 ppm100 ppm500 ppm2000 ppm
    NVRASTM D13531 ppm5 ppm10 ppm50 ppm
    Particles ≥ 0.1 µmSEMI C4150/mL200/mL1000/mL12000/mL
    Acetone AssayGC-FID99.999%99.99%99.9%99.5%

    For devices with copper/low-k interconnects, the chloride limit of Grade A becomes non-negotiable; chloride residues exceeding 100 ppb in bulk solvent have been correlated with pitting corrosion on exposed Cu seed layers during post-etch residue removal, with pit depths measured by atomic force microscopy exceeding 8 nm after a 60-second immersion at 25 °C.

    Applications employing single-wafer spin processors—such as the TEL CLEAN TRACK™ or SCREEN SU-3200—demand particle performance below the Grade A threshold. Here, point-of-use filtration through a 0.02 µm polypropylene depth filter with a fluoropolymer cage, installed immediately upstream of the dispense nozzle, is mandatory to combat particle shedding from pump diaphragms. The dispense volume per 300 mm wafer typically ranges from 15 mL to 25 mL during a backside rinse and edge-bead removal step, generating an instantaneous flow rate of 1.2 L/min at the nozzle. Under such shear, industrial acetone releases microgel particles from polymerized aldol byproducts that semiconductor-grade material eliminates via upstream hydrogenation of the raw distillate followed by pentane-precipitation of oligomeric species.

    When Acetone Purity Falls Below SEMI Grade A Thresholds

    Batch immersion tools used for photomask cleaning exhibit the most catastrophic failure mode associated with inferior acetone. A reticle exposed to off-spec solvent containing 2 ppm of diacetone alcohol (a common thermal degradation product) develops a non-volatile organic haze with a contact angle hysteresis exceeding 15° after pellicle mounting. The haze structure, analyzed by time-of-flight secondary ion mass spectrometry, shows characteristic C₆H₉O₃⁻ fragments that originate from self-condensation reactions catalyzed by basic residues. At 193 nm exposure wavelength, a haze layer of just 2 nm thickness attenuates transmission by 1.8%, shifting critical dimensions on the reticle beyond the ± 3 nm mask error enhancement factor budget for nodes below 7 nm. Semiconductor-grade acetone avoids this by incorporating a 0.1% w/w radical inhibitor (BHT or 4-methoxyphenol) at a precisely controlled concentration, documented on the certificate of analysis for each drum, to suppress autoxidation pathways without leaving metal-complexed derivatives.

    Another operational boundary emerges in via-cleaning processes for through-silicon vias (TSVs) with aspect ratios exceeding 10:1. High-purity acetone’s surface tension of 23.3 mN/m at 25 °C and viscosity of 0.306 mPa·s are critical for penetrating the blind-hole geometry. Even a 0.1% water content increase raises dynamic surface tension under Marangoni flow conditions enough to reduce penetration velocity by 12% in capillary models validated against 50 µm diameter, 500 µm deep test vehicles. Water content is therefore monitored online by near-infrared absorption at 1920 nm on the dispense line with an alarm threshold set at 55 ppm, at which point the supply drum is quarantined for re-drying over molecular sieve 3A.

    Compatibility with polymeric materials on the tool requires careful selection of acetone grade. Viton® O-rings in quick-connect couplings used on Semco CP dispense systems swell by 18% linear expansion when exposed to industrial acetone containing 0.5% mesityl oxide, causing leakage within fewer than 200 cycle tests. The low-mesityl-oxide specification of ≤ 10 ppm in semiconductor-grade acetone reduces swell to 2%, extending O-ring service life beyond 10⁴ cycles as validated per ISO 23936-2:2011 for elastomeric seals in chemical service. Polyethylene terephthalate (PET) filter housings, occasionally substituted for cost reduction, are strictly incompatible; even trace acetic acid (≤ 10 ppm) generated by gradual oxidation in semiconductor-grade acetone catalyses ester bond cleavage, causing stress-cracking in PET under 3 bar back-pressure. Housing material must be HDPE or PTFE according to SEMI S3-91 safety guidelines for solvent delivery.

    Regulatory and Environmental Handling Framework

    Semiconductor-grade acetone falls under the hazard classification Flammable Liquid Category 2 (H225) and Eye Irritant Category 2 (H319) according to CLP Regulation (EC) No 1272/2008. Flash point determined by closed-cup method (ASTM D56-16a) is -18 °C. Storage in fab sub-fab areas must comply with NFPA 30 and FM 7-32 for flammable liquid handling, which mandates continuous LEL monitoring with sensors calibrated to 25% LEL alarm setpoint. Ventilation rate for a 200 L drum storage cabinet is sized at 0.5 m³/s/m² of floor area, per SEMI S2-0718 Section 23.4.2. Solvent exhaust ductwork is fabricated from 316L stainless steel with welded joints, as acetone vapor attacks PVC ducts through plasticizer extraction, documented in multiple incident reports of duct collapse.

    Waste acetone from semiconductor operations is typically routed to a dedicated solvent recovery unit (SRU) operating under 40 CFR 261.4(a)(23) for on-site solvent reclamation. The minimum purity of the recovered distillate for re-use as edge-bead remover must meet Grade C limits; however, recovered acetone is never re-introduced into front-end gate clean wet benches to avoid cross-contamination from batch-to-batch variation in impurity profiles. Disposal through thermal oxidation achieves 99.99% destruction efficiency at a combustion chamber temperature of 1100 °C with residence time exceeding 2 seconds, controlled under EU Directive 2010/75/EU for waste incineration.

    Standard / RegulationRelevant Clause / MethodApplicability to Acetone
    SEMI C8-0616Table 1, Grades A/B/CPurity specification for semiconductor solvents
    SEMI C41-0616Section 8, Particle CountingParticle threshold for sub-0.1 µm defects
    ASTM D1353-13Method A, Gravimetric NVRNon-volatile residue determination
    ASTM D1364-02(2012)Karl Fischer titrationWater content in volatile solvents
    ASTM D56-16aTag Closed CupFlash point classification
    REACH (EC) 1907/2006Annex XVII, Entry 48Restriction on acetone in consumer aerosols (not applicable to industrial semiconductor use)
    RoHS (2011/65/EU)Article 4(1)Acetone is exempt as a process chemical
    FDA 21 CFR 175.300Resinous and polymeric coatingsNot applicable; semiconductor acetone not for food contact
    SEMI S2-0718Section 23, Fire ProtectionVentilation and LEL monitoring for fab solvent cabinets

    Supply chain integrity for the product is verified through a blockchain-trackable custody protocol. Each container bears a QR-coded certificate of analysis that includes the actual lot-specific ICP-MS data for 27 elements, NVR lot value, particle count histogram, and the retention time distribution of the gas chromatogram. The drum is sealed with tamper-evident, high-purity PE-laminated aluminum closures, and the filling process is performed in an ISO Class 4 cleanroom under unidirectional airflow. Shelf life assigned is 12 months from the filling date when stored at 15–25 °C; post-opening, the solvent must be consumed within 48 hours or re-certified for water and particles. Storage below 5 °C is prohibited due to the risk of diacetone alcohol formation even with inhibitor presence, as reaction kinetics at low temperature shift toward acid-catalyzed dimerization when trace acetic acid is present.

    In fabs operating ion implant photoresist strip sequences with downstream oxygen plasma ashing, the acetone pre-wet step that precedes ashing reduces the dose of ionizing energy required to fully carbonize the photoresist surface. The substitution of electronic-grade acetone reduces the post-ash residual sulfur content—derived from sulfonate photoacid generators in chemically amplified resists—by a factor of 3 compared to reagent-grade acetone, as quantified by X-ray photoelectron spectroscopy on the Si surface after ashing. This is attributed to the lower heavy-metal content, which otherwise catalyses sulfone formation during thermal degradation. Published data for this specific configuration is limited, but internal qualification runs on a 300 mm Axcelis® asher with a 2.45 GHz microwave plasma source have shown repeatable results across five lots.